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化学进展 2013, Vol. 25 Issue (11): 1981-1988 DOI: 10.7536/PC130145 前一篇   

• 综述与评论 •

巨介电CCTO及CCTO/聚合物研究

王亚军*, 王芳芳, 冯长根, 曾庆轩   

  1. 北京理工大学 爆炸科学与技术国家重点实验室 北京 100081
  • 收稿日期:2013-01-01 修回日期:2013-04-01 出版日期:2013-11-15 发布日期:2013-09-12
  • 通讯作者: 王亚军 E-mail:yajunwang@bit.edu.cn
  • 基金资助:

    爆炸科学与技术国家重点实验室(北京理工大学)自主课题项目(No.YBKT14-09)和北京理工大学基础研究基金项目(No.20120242013)资助

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导出 被引次数 ( 5 | 1 )

CCTO with Giant Dielectric Constant and CCTO/Polymer Composite

Wang Yajun*, Wang Fangfang, Feng Changgen, Zeng Qingxuan   

  1. State Key Laboratory of Explosion Science and Technology, Beijing Institute of Technology, Beijing 100081, China
  • Received:2013-01-01 Revised:2013-04-01 Online:2013-11-15 Published:2013-09-12

具有类钙钛矿结构的钛酸铜钙CaCu3Ti4O12(CCTO)介电陶瓷材料以其巨介电特性、介电常数的温度和频率稳定性及非线性等特性在材料研究领域和实际应用中受到广泛关注。本文比较了CCTO各种巨介电理论和模型,详述了目前能够较合理地解释CCTO巨介电特性的内部阻挡层电容模型(IBLC)。综述了制备方法、制备条件及改性方法对CCTO介电性能的影响。离子掺杂是降低CCTO介电损耗常用的方法之一,掺杂效果受掺杂离子半径、离子价态等多种因素的影响。将陶瓷粉体与聚合物进行复合形成0-3型复合材料是目前制备综合性能良好的介电材料的有效方法,对CCTO/聚合物复合材料的研究进展进行了评述。最后,展望了CCTO陶瓷材料的发展前景。

关键词： 介电性能, 复合材料, 钛酸铜钙, 掺杂改性

Perovskite-like structure CaCu3Ti4O12 (CCTO) dielectric ceramic has been paid much attention in the field of materials science and application for its colossal dielectric constant, independence of dielectric properties on the frequency and temperature in a wide range, and nonlinear behaviors. Various theories and models which are used to explain the original of colossal dielectric constant of CCTO are compared, among which the internal barrier layer capacitance (IBLC), the most reasonable model is claimed in detail. Preparing methods, preparing conditions and various modification methods for preparing CCTO and improving the dielectric properties are discussed. Ion-doping is the most popular way to decrease the dielectric loss of CCTO. The effects of ion-doping depend on the ionic radius, ionic valence and so on. It is a promising way to prepare the 0-3 composites by using ceramic as filler and polymer as matrix. The research progress of CCTO/polymer composites is discussed here. And the prospects of CCTO is put forward.

Contents
1 Introduction
2 Origin of giant dielectric constant of CCTO
2.1 Classical model
2.2 Internal barrier layer capacitance (IBLC) model
3 Preparation of CCTO
3.1 Preparation of CCTO powder
3.2 Method for reducing sintering temperature and time of CCTO
3.3 Preparation of CCTO film
4 Improvement of the properties of CCTO
4.1 A or B site doping of CCTO
4.2 Substitution of CCTO
5 CCTO/polymer composite
5.1 CCTO/polymer composite and mixture model
5.2 Improvement of the interfacial properties of CCTO/polymer
5.3 Three-phase composite
6 Conclusion

Key words: dielectric performance, composites, CCTO, doping modification

中图分类号: 

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摘要

巨介电CCTO及CCTO/聚合物研究