中文
Announcement
More
Progress in Chemistry 2009, Vol. 21 Issue (09): 1820-1826 Previous Articles   Next Articles

• Review •

Crystalline Structures and Characterizations of Porous Silicon

Lv Jingmei1|Cheng Xuan2**   

  1. (1. Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen |361005, China; 2. Fujian Key Laboratory of Advanced Materials, Department of Materials Science and Engineering, College of Materials, Xiamen University, Xiamen 361005, China)
  • Received: Revised: Online: Published:
  • Contact: Cheng Xuan E-mail:xcheng@xmu.edu.cn
  • Supported by:

    National Natural Science Foundation of China

PDF ( 2242 ) Cited
Export

EndNote

Ris

BibTeX

The formation of porous silicon (PSi) involves the transition from perfect single-crystal of silicon to non-perfect crystalline such as polycrystalline or even amorphous structures, depending strongly upon the fabrication conditions and the nature of silicon substrates. Significant effort has been made to employ various ex-situ methods to study crystalline transformation in order to understand the photoluminescence (PL) of PSi. This paper summarizes the crystalline structures of PSi fabricated at different conditions, and compares the advantages of various characterization techniques. TEM can directly observe the crystalline structures of PSi, but suffers difficulties in the preparation of TEM samples and the possible introduction of amorphous contents. The information of the inter-planar distance and the crystallite size of PSi can be obtained from XRD, while the pore structures (pore wall and size) based on the proposed structural model can be obtained from small angle X-ray scattering method, with more detailed information about the coordination atoms is available from X-ray absorption fine structure method. Raman spectroscopy is proved to be a non-destructive and quantitative method to characterize the microstructure of PSi when combined with the corresponding models. Finally, the current problems and future researching trends in the crystalline structures and their characterizations of PSi will be briefly mentioned.

Content
1 Introduction
2 Crystalline structures and characterization methods of porous silicon
2.1 Crystalline structures
2.2 Characterization methods
2.3 The limitation of the local characterization methods
3 Summarization

CLC Number: 

[ 1 ]  Uhlir A. Bell Syst . Tech. J . , 1956 , 35 : 333 —347
[ 2 ]  Canham L T. Appl . Phys. Lett . , 1990 , 57 : 1046 —1048
[ 3 ]  Koshida N , Matsumoto N. Mat . Sci . Eng. R: Rep. , 2003 , 40 :169 —205
[ 4 ]  Yoffe A D. Adv. Phys. , 1993 , 42 : 173 —266
[ 5 ]  TheiB W. Surf . Sci . Rep. , 1997 , 29 : 91 —192
[ 6 ]  Cullis A G, Canham L T, Calcott P D J . J . Appl . Phys. , 1997 ,82 : 909 —965
[ 7 ]  Ross G G, Barba D , Martin F. Int . J . Nanotechno. , 2008 , 5 :984 —1017
[ 8 ]  Cheng X, Liu F M, Wen Z X, et al . Electrochem. , 2001 , 7 : 78 —84
[ 9 ]  LüJ M, Cheng X. ECS Transactions , 2008 , 11 : 9 —17
[10 ]  Cheng X, Feng Z D , Luo G F. Electrochim. Acta , 2003 , 48 :497 —501
[11 ]  LüJ M, Cheng X. Adv. Mater. Res. , 2008 , 31 : 170 —172
[12 ]  Arita Y, Sunohara Y. J . Electrochem. Soc. , 1977 , 124 : 285 —295
[13 ]  Beale M I J , Chew N G, Uren MJ , et al . J . Cryst . Growth , 1985 ,73 : 622 —636
[14 ]  Young I M, Beale M I J , Benjamin J D. Appl . Phys. Lett . ,1985 ,46 : 1133 —1135
[15 ]  Solanki C S , Bilyalov R R , Poortmans J , et al . Thin Solid Films ,2004 , 451P452 : 649 —654
[16 ]  Nobuaki N , Ikuo S , Masamichi Y, et al . Jpn. J . Appl . Phys. ,1992 , 31 : L490 —L493
[17 ]  Arita Y. J . Cryst . Growth , 1978 , 45 : 383 —392
[18 ]  Perez J M, Villalobos J , McNeill P , et al . Appl . Phys. Lett . ,1992 , 61 : 563 —565
[19 ]  Turishchev S Y, Terekhov V A , Kashkarov V M, et al . J . Electron.Spectrosc. , 2007 , 156P158 : 445 —451
[20 ]  Sugiyama H , Nittono O. J . Cryst . Growth , 1990 , 103 : 156 —163
[21 ]  Volker L , Barbara J , Thomas M, et al . Jpn. J . Appl . Phys. ,1993 , 32 : 2095 —2099
[22 ]  Bellet D , Dolino G. Thin Solid Films , 1996 , 276 : 1 —6
[23 ]  Loustau E R L , Valladares A A. J . Non-Cryst . Solids , 2008 , 354 :2200 —2203
[24 ]  Berbezier I , Halimaoui A. J . Appl . Phys. , 1993 , 74 : 5421 —5425
[25 ]  Barla K, Bomchil G, Herino R , et al . J . Cryst . Growth , 1984 , 68 :721 —726
[26 ]  Barla K, Herino R , Bomchil G, et al . J . Cryst . Growth , 1984 , 68 :727 —732
[27 ]  Kim K H , Bai G, Nicolet MA , et al . J . Appl . Phys. , 1991 , 69 :2201 —2205
[28 ]  Dürr M, Hêfer U. Surf . Sci . Rep. , 2006 , 61 : 465 —526
[29 ]  Chuang S F , Collins S D , Smith RL. Appl . Phys. Lett . ,1989 , 55 :1540 —1542
[30 ]  Amato G, Brunetto N. Mater. Lett . , 1996 , 26 : 295 —298
[31 ]  Amato G, Brunetto N , Parisini A. Thin Solid Films , 1997 , 297 :73 —78
[32 ]  Teschke O. Appl . Phys. Lett . , 1996 , 68 : 2129 —2131
[33 ]  Cullis A G, Canham L T. Nature , 1991 , 353 : 335 —338
[34 ]  Wijesinghe TL , Sudesh L , Teo EJ . Electrochim. Acta , 2008 , 53 :4381 —4386
[35 ]  Vitanov P , Delibasheva M, Goranova E , et al . Vacuum , 2000 , 58 :351 —357
[36 ]  Labunov V , Bondarenko V , Glinenko I , et al . Thin Solid Films ,1986 , 137 : 123 —134
[37 ]  Veprek S , Sarott F A , Iqbal Z. Phys. Rev. B. , 1987 , 36 : .3344 —3350
[38 ]  Vezin V , Goudeau P , Naudon A , et al . Appl . Phys. Lett . , 1992 ,60 : 2625 —2627
[39 ]  Sham T K, Jiang D T, Coulthard I , et al . Nature , 1993 , 363 :331 —334
[40 ]  Van Buuren T, Gao Y, Tiedje T, et al . Appl . Phys. Lett . , 1992 ,60 : 3013 —3015
[41 ]  Dalba G, Daldosso N , Fornasini P , et al . J . Non-Cryst . Solids ,1998 , 232P234 : 370 —376
[42 ]  Papadimitriou D , Bitsakis J , Samitier J , et al . Thin Solid Films ,1999 , 349 : 293 —297
[43 ]  Ferrara M A , Donato M G, Sirleto L , et al . J . Raman Spectrosc. ,2008 , 39 : 199 —204
[44 ]  Papadimitriou D , Tsamis C , Nassiopoulou A G. Sensor. Actuat . B-Chem. , 2004 , 103 : 356 —3611
[45 ]  GhannamM Y, Hassan MM, DePauw V , et al . Thin Solid Films ,2008 , 516 : 6924 —6929
[46 ]  Richter H , Wang Z P , Ley L. Solid State Commun. , 1981 , 39 :625 —629
[47 ]  Campbell I H , Fauchet P M. Solid State Commun. , 1986 , 58 :739 —741
[48 ]  Rasheed B G, Mavi H S , Shukla A K, et al . Mater. Sci . Eng. B ,2001 , 79 : 71 —77
[49 ]  Abramof P G, Ferreira N G, Beloto A F , et al . J . Non-Cryst .Solids , 2004 , 338P340 : 139 —142
[50 ]  Patel B K, Mythili R , Vijayalaxmi R , et al . Phys. B : Condens.Mat . , 2002 , 322 : 146 —153
[51 ]  Teschke O , Goncalves M C , Galembeck F. Appl . Phys. Lett . ,1993 , 63 : 1348 —1350
[52 ]  Sui Z, Leong P P , Herman I P , et al . Appl . Phys. Lett . , 1992 ,60 : 2086 —2088

[1] Gu Zhenyu|Zhu Weihong|Zhong Xinhua**. New Methods for Tuning Band Gap of Colloidal Semiconductor Nanocrystals [J]. Progress in Chemistry, 2008, 20(05): 629-636.