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Progress in Chemistry 2009, Vol. 21 Issue (05): 940-947 Previous Articles   Next Articles

• Review •

Measurement Methods for Charge Carrier Mobility in Organic Semiconductors

Chen Zhenyu1 ;   Ye Tengling1,2 ;  Ma dongge1**   

  1. (1. Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China; 2. Graduate School of Chinese Academy of Sciences, Beijing 100049, China)
  • Received: Revised: Online: Published:
  • Contact: Ma Dongge E-mail:mdg1014@ciac.jl.cn
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The models of charge carrier mobility in organic semiconductors are briefly described. The measurement principles of various experiment techniques for charge carrier mobility in organic semiconductors are especially illustrated. Which include the constant wave current-voltage (CW I-V), time of flight (TOF) , transient electroluminescence, dark injection space charge limited current (DI SCLC), field-effect transistor (FET), flash-photolysis time-resolved microwave conductivity technique (FR TRMC), voltage-modulated millimeter-wave spectroscopy (VMS), photoinduced transient Stark spectroscopy, impedance(admittance) spectroscopy. The advantages, disadvantages and recent progress, the critical technical issues and the different applying fields are reviewed.

Contents
1 Introduction
2 The models of charge carriers’ mobility in the organic semiconductor
3 Measurement methods of charge carrier mobility in organic semiconductors
3.1 Constant wave current-voltage (CW I-V)
3.2 Time of flight (TOF)
3.3 Transient electroluminescence
3.4 Dark injection space charge limited current (DI SCLC)
3.5 Field effect transistor (FET)
3.6 Flash-photolysis time-resolved microwave conductivity technique (FR TRMC)
3.7 Voltage-modulated millimeter-wave spectroscopy (VMS)
3.8 Photoinduced transient Stark spectroscopy
3.9 Impedance（admittance） spectroscopy
4 Conclusion

Key words: charge carrier, mobility, organic semiconductor

CLC Number: 

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