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Progress in Chemistry 2009, Vol. 21 Issue (01): 128-133 Previous Articles   Next Articles

• Review •

Preparation of the Delafossite Structure p Type Transparent Conducting Oxide Thin Films by Sol-Gel Process

Wang Jinmei1;Li Da1;Deng Zanhong1;Zhu Xuebin2;Dong Weiwei1;Fang Xiaodong1**   

  1. (1. Key Lab of New Thin Film Solar Cells, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China|2. Key Lab of New Thin Film Solar Cells, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China)
  • Received: Revised: Online: Published:
  • Contact: Fang Xiaodong E-mail:xdfang@aiofm.ac.cn
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The delafossite structure p type transparent conducting oxide (TCO) thin films are promising candidates with potential applications in electronics, because it maybe generate “transparent devices” with n-TCO. In this paper, the structural property of the delafossite structure p-TCO, as well as the basic principle and the characteristic of the sol-gel method are reviewed. The technological process in preparation of the delafossite structure p-TCO thin films by sol-gel method is discussed systematically. The relative advantages and disadvantages of the systems of sol about organic alkoxide and inorganic salt are analyzed, and further development are discussed. It is pointed out that sol-gel method is an effective and feasible means to prepare p-TCO thin films.

Contents
1 Introduction
2 The structural property of the delafossite structure p-TCO
3 The summarization of the sol-gel method
3.1 The basic principle of the sol-gel method
3.2 The characteristic of the Sol-Gel method
4 Preparation of the delafossite structure p-TCO by sol-gel method
4.1 The hydrolysis technology of organic alkoxide
4.2 Inorganic salt technology of the sol-gel method
5 Outlook

Key words: delafossite structure, sol-gel, transparent conductive oxides, thin films

CLC Number: 

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