中文
Announcement
More
Progress in Chemistry 2007, Vol. 19 Issue (9): 1371-1380 Previous Articles   Next Articles

• Review •

Organic Electrical Bistability Devices

Shi Shengwei;Peng Junbiao**   

  1. Institute of Polymer Optoelectronic Materials and Devices, Key Laboratory of Specially Functional Materials and Advanced Manufacturing Technology, South China University of Technology, Guangzhou 510640, China
  • Received: Revised: Online: Published:
  • Contact: Peng Junbiao
PDF ( 1627 ) Cited
Export

EndNote

Ris

BibTeX

Organic Electrical Bistability Devices (OEBDs) show the advantages in low-cost,easy processing, small size, fast response, low power and high storage density.OEBDs have attracted more and more considerable attention due to their wide potential applications in information storage and logic circuit. But the mechanism of OEBDs still hasn’t been well understood, and some fundamental questions such as new concepts and theories, and new structures, methods, technology and materials involved during the fabrication and processing need to be further investigated. In this paper, recent progress of OEBDs is reviewed, and potential applications in electrical switching memory and scientific problems of OEBDs are also discussed here.

CLC Number: 

[ 1 ] Yang Y, Ma L P , Wu J H. MRS Bull . , 2004 , 29 (11) : 833 —837
[ 2 ] [ 2007-07-24 ] . http://www.elecdesign.com/Files/29/3756/Figure-06.gif
[ 3 ] Szymanski A , Larson D C , Labes M M. Appl . Phys. Lett . ,1969 , 14 (3) : 88 —90
[ 4 ] Carchano H , Lacoste R , Segui Y. Appl . Phys. Lett . , 1971 , 19(10) : 414 —415
[ 5 ] Henisch H K, Smith W R. Appl . Phys. Lett . , 1974 , 24 (12) :589 —591
[ 6 ] Segui Y, Ai B , Carchano H J . Appl . Phys. , 1976 , 47 (1) :140 —143
[ 7 ] Elsharkawi A R , Kao C. J . Phys. Chem. Solids , 1977 , 38 (1) :95 —96
[ 8 ] Henisch H K, Meyers J A , Smidt P E , et al . Thin Solid Films ,1978 , 51 (2) : 265 —274
[ 9 ] Potember R S , Poehler T O , Cowan D O. Appl . Phys. Lett . ,1979 , 34 (6) : 405 —407
[10] Villeret B , Nechtschein M. Phys. Rev. Lett . , 1989 , 63 (12) :1285 —1287
[11] Arias A C , Hümmelgen I A , Meneguzzi A , et al . Adv. Mater. ,1997 , 9 (12) : 972 —974
[12] Duggal A R , Sun F G. J . Appl . Phys. , 1998 , 83 (4) : 2046 —2051
[13] Sun F G, Duggal A R. J . Appl . Phys. , 1998 , 84 (10) : 5720 —5724
[14] De Lima J R , Peres L O , Hümmelgen I A , et al . Solid StateElectronics , 2000 , 44 (3) : 565 —569
[15] Ma D , Aguiar M, Hummelgen I A , et al . Adv. Mater. , 2000 ,12 (14) : 1063 —1066
[16] Gao H J , Sohlberg K, Xue Z Q , et al . Phys. Rev. Lett . , 2000 ,84 (8) : 1780 —1783
[17] Ma L P , Liu J , Yang Y. Appl . Phys. Lett . , 2002 , 80 (16) :2997 —2999
[18] Ma L P , Pyo S , Yang Y, et al . Appl . Phys. Lett . , 2003 , 82(9) : 1419 —1421
[19] Pyo S , Ma L P , Yang Y, et al . J . Appl . Phys. , 2005 , 98 (5) :art . no. 054303
[20] Wu J H , Ma L P , Yang Y. Phys. Rev. B , 2004 , 69 (11) : art .no. 115321
[21] Ma L P , Liu J , Yang Y, et al . Appl . Phys. Lett . , 2002 , 80(3) : 362 —364
[22] He J , Ma L P , Yang Y, et al . J . Appl . Phys. , 2004 , 97 (6) :art . no. 064507
[23] Ouyang J Y, Chu C W, Yang Y, et al . Nat . Mater. , 2004 , 3(12) : 918 —922
[24] Chu C W, Ouyang J Y, Yang Y, et al . Adv. Mater. , 2005 , 17(11) : 1440 —1443
[25] Ouyang J Y, Chu C W, Yang Y, et al . Appl . Phys. Lett . ,2005 , 86 (12) : art . no. 12507
[26] Tseng R J , Huang J , Yang Y, et al . Nano Lett . , 2005 , 5 (6) :1077 —1080
[27] Ouyang J Y, Chu C W, Yang Y, et al . Proceedings of the IEEE ,2005 , 93 (7) : 1287 —1296
[28] Ma L P , Xu Q F , Yang Y. Appl . Phys. Lett . , 2004 , 84 (24) :4908 —4911
[29] Tseng R J , Ouyang J Y, Yang Y, et al . Appl . Phys. Lett . ,2006 , 88 (12) : art . no. 123506
[30] Prakash A , Ouyang J Y, Yang Y, et al . J . Appl . Phys. , 2006 ,100 (5) : art . no. 054309
[31] Yang Y, Ouyang J Y, Ma L P , et al . Adv. Funct . Mater. ,2006 , 16 (8) : 1001 —1014
[32] Bozano L D , Kean B W, Scott J C , et al . Appl . Phys. Lett . ,2004 , 84 (4) : 607 —609
[33] Simmons J G, Verderber R R. Proc. R. Soc. A , 1967 , 301 :77 —102
[34] Bozano L D , Kean B W, Scott J C , et al . Adv. Funct . Mater. ,2005 , 15 (12 ) : 1933 —1939
[35] Verbakel F , Meskers S C J , Janssen R A J . Appl . Phys. Lett . ,2006 , 89 (10) : art . no. 102103
[36] Jung J H , Jin J Y, Kim T W, et al . Appl . Phys. Lett . , 2006 ,88 (11) : art . no. 112107
[37] Mohanta K, Majee S K, Pal A J , et al . J . Phys. Chem. B ,2006 , 110 (37) : 18231 —18235
[38] Mê ller S , Perlov C , Forrest S R , et al . Nature , 2003 , 426 (13) :166 —169
[39] Xu X, Register R A , Forrest S R , et al . Appl . Phys. Lett . ,2006 , 89 (14) : art . no. 142109
[40] Lai YS , Tu C H , Kwong D , et al . Appl . Phys. Lett . , 2005 , 87(12) : art . no. 122101
[41] Majee S K, Majumdar H S , Pal A J , et al . Synth. Met . , 2006 ,156 (11P13) : 828 —832
[42] Smits J H A , Meskers S CJ , Janssen R AJ , et al . Adv. Mater. ,2005 , 17 (9) : 1169 —1173
[43] Colle M, Buchel M, de Leeuw D M. Org. Electron. , 2006 , 7(5) : 305 —312
[44] Verbakel F , Meskers S C J , Janssen R A J . Chem. Mater. ,2006 , 18 (11) : 2707 —2712
[45] Lai Q X, Zhu Z H , Chen Y, et al . Appl . Phys. Lett . , 2006 , 88(13) : art . no. 133515
[46] Andersson P , Robinson N D , Berggren M. Adv. Mater. , 2005 ,17 (14) : 1798 —1803
[47] Teo E Y H , Lin Q D , Zhu C , et al . Org. Electron. , 2006 , 7(3) : 173 —180
[48] Ouisse T , Stephan O. Org. Electron. , 2004 , 5 (5) : 251 —256
[49] Bandyopadhyay A , Pal A J . Adv. Mater. , 2003 , 15 ( 22) :1949 —1952
[50] Taylor D M, Mills C A. J . Appl . Phys. , 2001 , 90 (1) : 306 —309
[51] Ling Q D , Song Y, Kang E T , et al . Adv. Mater. , 2005 , 17(4) : 455 —459
[52] Ling Q , Song Y, Kang E T , et al . Electrochem. Solid State Lett . , 2006 , 9 (8) : G268 —G271
[53] Song Y, Tan Y P , Zhu C X, et al . J . Appl . Phys. , 2006 , 100(8) : art . no. 084508
[54] Song Y, Ling Q D , Zhu C , et al . IEEE Electron Device Lett . ,2006 , 27 (3) : 154 —156
[55] Ling Q D , Wang W, Kang E T , et al . J . Phys. Chem. B , 2006 ,110(47) : 23995 —24001
[56] Ling Q D , Lim S L , Kang E T , et al . Langmuir , 2007 , 23(1) :312 —319
[57] Ling Q D , Chang F C , Kang E T , et al . J . Am. Chem. Soc. ,2006 , 128 (27) : 8732 —8733
[58] Mahapatro A K, Agrawal R , Ghosh S J . Appl . Phys. , 2004 , 96(6) : 3583 —3585
[59] Tondelier D , Lmimouni K, Vuillaume D , et al . Appl . Phys.Lett . , 2004 , 85 (23) : 5763 —5765
[60] Chen J S , Ma D G. Appl . Phys. Lett . , 2005 , 87 (2) : art . no.023505
[61] Muller R , Genoe J , Heremans P. Appl . Phys. Lett . , 2006 , 88(24) : art . no. 242105
[62] Oyamada T , Tanaka H , Adachi C , et al . Appl . Phys. Lett . ,2003 , 83 (6) : 1252 —1254
[63] Fang J F , You H , Ma D G, et al . Inorg. Chem. , 2006 , 45 (9) :3701 —3704
[64] Chen J S , Ma D G. Appl . Phys. Lett . , 2006 , 89 (8) : art . no.083514
[65] Chen J S , Ma D G. Semicond. Sci . Tech. , 2006 , 21 ( 8) :1121 —1124
[66] Bandyopadhyay A , Pal A J . Appl . Phys. Lett . , 2003 , 82 (8) :1215 —1217
[67] Kang S H , Crisp T , Bulovic V , et al . Appl . Phys. Lett . , 2004 ,85 (20) : 4666 —4668
[68] Bandyopadhyay A , Pal A J . J . Phys. Chem. B , 2003 , 107(11) : 2531 —2536
[69] Bandyopadhyay A , Pal A J . J . Phys. Chem. B , 2005 , 109(13) : 6084 —6088
[70] Lauters M, McCarthy B , Jabbour G E , et al . Appl . Phys. Lett . ,2005 , 87 (23) : art . no. 231105
[71] Lauters M, McCarthy B , Jabbour G E , et al . Appl . Phys. Lett . ,2006 , 89 (1) : art . no. 013507
[72] Mukherjee B , Pal A J . Appl . Phys. Lett . , 2004 , 85 ( 11) :2116 —2118
[73] Bandyopadhyay A , Pal A J . Appl . Phys. Lett . , 2004 , 84 (6) :999 —1001
[74] Mukherjee B , Pal A J . Org. Electron. , 2006 , 7 (5) : 249 —255
[75] Tang W, Shi H Z , Xu G, et al . Adv. Mater. , 2005 , 17 (19) :2307 —2311
[76] Rozenberg M J , Inoue I H , Sanchez M J . Phys. Rev. Lett . , 2004 , 92 (17) : art . no. 178302
[77] Majumdar H S , Bandyopadhyay A , Pal A J , et al . J . Appl .Phys. , 2002 , 91 (4) : 2433 —2437
[78] Majumdar H S , Bolognesi A , Pal A J . Synth. Met . , 2004 , 140(2/3) : 203 —206
[79] Majumdar H S , Bolognesi A , Pal A J . J . Phys. D , 2003 , 36(2) : 211 —215
[80] Jiang G Y, Wang S , Zhu D B , et al . Chem. Mater. , 2006 , 18(2) : 235 —237
[81] Wu H M, Song Y L , Zhu D B , et al . Adv. Mater. , 2003 , 15(22) : 1925 —1929
[82] Wen Y Q , Wang J X, Zhu D B , et al . Adv. Mater. , 2006 , 18(15) : 1983 —1987
[83] Jiang G Y, Michinobu T , Zhu D B , et al . Adv. Mater. , 2005 ,17 (18) : 2170 —2173
[84] Wen Y Q , Song Y L , Zhu D B , et al . Adv. Mater. , 2004 , 16(22) : 2018 —2021
[85] Yuan W F , Sun L , Zhu D B , et al . Adv. Mater. , 2005 , 17(2) : 156 —160
[86] Hua Z Y, Chen G R , Xu W, et al . Appl . Surf . Sci . , 2001 ,169P170 : 447 —451
[87] Wan X G, Li J , Hua Z Y, et al . Phys. Stat . Sol . A , 2000 , 181(1) : R13 —R15
[88] Hua Z Y, Xu W, Chen G R , et al . Synth. Met . , 2003 , 137 (1/3) : 1531 —1534
[89] Zhang Q , Wang W J , Hua Z Y, et al . Synth. Met . , 2004 , 144(3) : 285 —289
[90] Zhang Q , Kong L Z , Hua Z Y, et al . Solid State Commun. ,2004 , 130 (12) : 799 —802
[91] Mo XL , Chen G R , Hua Z Y, et al . Thin Solid Films , 2003 ,436 (2) : 259 —263
[92] 郭鹏(Guo P) , 徐伟(Xu W) . 材料科学与工程学报(Journal of Materials Science & Engineering) , 2005 , 23(6) : 910 —914

[1] Sun Sai, Zhuang Xiaodong, Wang Luxin, Wang Cheng, Zhang Bin, Chen Yu. Graphene-Based Functional Materials for Information Storage: Materials, Devices and Performance [J]. Progress in Chemistry, 2016, 28(1): 18-39.
[2] Yang Lei, Cheng Tao, Zeng Wenjin, Lai Wenyong, Huang Wei. Inkjet-Printed Conductive Polymer Films for Optoelectronic Devices [J]. Progress in Chemistry, 2015, 27(11): 1615-1627.
[3] Cai Xiaozhou, Jiang Lang, Dong Huanli, Li Jingze*, Hu Wenping* . Organic Circuits and Their Basic Elements [J]. Progress in Chemistry, 2012, 24(12): 2431-2442.
Viewed
Full text


Abstract

Organic Electrical Bistability Devices