Transition metal dichalcogenides (TMDCs) have been widely concerned due to dependence of its energy band on the number of layers. Especially the two-dimensional molybdenum disulfide (MoS₂) film has become a research hot spot because of its excellent photoelectric properties. So far, chemical vapor deposition (CVD) and exfoliation have become the main methods for preparing MoS₂ films, but it is very difficult to precisely control the layers of MoS₂ using these methods. Research confirms that the MoS₂ films can be further processed by etching methods so as to obtain the sample with a monolayer or a specific number of layers. Therefore, in this paper the research progress about etching technology of MoS₂ films based on different etching mechanisms is reviewed and the influence of different etching techniques on the quality of etched films is analyzed. Moreover, the application and prospects of these etching methods in field effect transistor(FET) and other optoelectronic devices are also introduced. Finally, problems that need to be solved in the future study are prospected.
Contents
1 Introduction
2 Physical properties of molybdenum disulfide films
2.1 Crystal structure and band structure
2.2 Optical properties
3 Etching methods of molybdenum disulfide films
3.1 Plasma etching
3.2 Laser etching
3.3 Oxygen/air etching
3.4 Other chemical etching methods
4 Application of etching methods in optoelectronic devices
4.1 Field effect transistor
4.2 Other optoelectronic devices
5 Conclusion and outlook