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Progress in Chemistry 2015, Vol. 27 Issue (11): 1578-1590 DOI: 10.7536/PC150433 Previous Articles   Next Articles

• Review and comments •

Chemical Vapor Deposition and Application of Graphene-Like Tungsten Disulfide

You Yuncheng1,2, Zeng Tian1,2, Liu Jinsong2, Hu Tingsong2, Tai Guoan1*   

  1. 1. State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education and Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;
    2. College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
  • Received: Revised: Online: Published:
  • Supported by:
    The work was supported by the Fundamental Research Funds for the Central Universities(No.NS2013095).
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Graphene-like transition metal chalcogenide compounds such as MoS2, WS2, MoSe2, WSe2 have attracted wide interests because of their unique layer number-dependent bandgap. In particularly, intrinsic WS2 is a bipolar semiconductor with n-type and p-type electronic transport properties, it is expected to be widely used in electrical circuit, memory, photodetector and photovoltaic devices. Recently, chemical vapor deposition(CVD) technique, in contrast to traditional chemical or physical exfoliation options, is extensively used to prepare large-area two-dimensional transition metal chalcogenide(such as MoS2, MoSe2, WS2 and WSe2) atomic layers. Although a few review papers about other two-dimensional materials have been published, the detailed introduction for graphene-like WS2 has been rarely reported. In this review, we summarize the research progress on chemical vapor deposition and related devices of graphene-like WS2. First, we introduce two growth methods of preparing WS2 thin films via chemical vapor deposition techniques: two-step growth route and one-step growth route, and then discuss the growth mechanism of the two methods and essential parameters that influence the growth of the WS2 thin films such as sulfur content, carrier gas composition, reaction temperature and substrate materials. Then, we introduce the research progress of WS2-based transistors, photoelectric devices and related heterostructures. Finally, we analyze and review possible problems in developing WS2-related devices.

Contents
1 Introduction
2 Physical Properties of tungsten disulfide thin films
3 Preparation of WS2 thin films via chemical vapor deposition technique
3.1 Classification of chemical vapor deposition technique
3.2 Mechanism of preparing WS2 thin films
4 Application of WS2 thin films in electrical devices
4.1 Field effect transistor
4.2 Photoelectric device
4.3 Heterostructural device
5 Conclusion and outlook

Key words: WS2 thin film, chemical vapor deposition, transistor, heterostructure, photoelectric device

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