| Perovskite | Wavelength range (nm) | Responsivity (mA·W−1) | Detection rate (Jones) | EQE (%) | LDR (dB) | Response time [trise/tdecay] (µs) | Ref. |
|---|---|---|---|---|---|---|---|
| MAPbI3/Gd-doped ZnO nanorods | 250~1357 | 220 @1357 nm | 9.3×109@1357 nm | 4 × 105 /5 × 105 | 17 | ||
| MAPbI3-xClx | 1012 @1100 nm | 5.6 × 1013 @895 nm | 18 | ||||
| MAPbI3 | 400~1064 | 150 @820 nm | 22% @820 nm | 1.2 × 105/8 × 104 | 21 | ||
| MAPbI3 | 400~1000 | 4 × 103 @800 nm | 600% @800 nm | 39/1.9 | 22 | ||
| CsPbBr3/GeSn | 450~2200 | 4.7 @2200 nm | -/26 | 55 | |||
| Si/MAPbBr3 single crystal | 405~1064 | 5 @1064 nm | 2×1010 @1064 nm | 0.52/2.44 | 56 | ||
| MAPbI3/Si-NPA | 400~1050 | 8.13 @780 nm | 9.74 × 1012 @780 nm | 253.3/230.4 | 57 | ||
| MAPbI3-x(SCN)x/Si-NWs | 350~1100 | 1.3 × 104 @800 nm | 1.0 × 1013 @800 nm | 22.2/17.6 | 58 | ||
| Cs-doped FAPbI3/Si nanowire array | 300~1200 | 14.86 @850 nm | 2.04 × 1010 @850 nm | 4/8 | 59 | ||
| PVP-modified MAPbIxCl3-x/Si | 405~988 | ≈1250 @988 nm | ≈5.3 × 1011 @808 nm | ≈275% @808 nm | 44 | 645/560 | 60 |
| Si/MAPbI3 | 300~1150 | 50.9 @815 nm | 2.23 × 1012 @815 nm | <10% | 1.3×104/1.46× 104 | 61 | |
| MAPbIxCl3-x/Si | 300~1150 | 870 @800 nm | 6 × 1012 @800 nm | 5×104 /1.5×105 | 62 | ||
| MAPbI3/Si | 400~1200 | 18.4 @970 nm | 1.8 × 1012 @970 nm | 23.5% | 97 | ||
| graphene/CH3NH3PbI3 | 400~800 | 180 | >1015 | 5×104% | 87 ms/540 ms | 63 | |
| (PEA)2(MA)2Pb3I10/GaAs NWs | 400~800 | 75 | 1.49×1011 | 568 ms/785 ms | 74 | ||
| FA0.85Cs0.15PbI3/PtSe2 | 300~1200 | 117.7 @808 nm | 2.91 × 1012 @808 nm | 14.9% @808 nm | 0.078/0.060 | 68 | |
| FA0.85Cs0.15PbI3/PtSe2 | 200~1550 | 313 @808 nm | 2.72 × 1013 @808 nm | 50% @808 nm | 3.5/4 | 69 | |
| MAPbI3/MoS2 | 500~850 | 1.11×105 @850 nm | 2.39 × 1010 @850 nm | 6.17×106/4.5× 106 | 71 | ||
| graphene /(PEA)2SnI4/MoS2/ graphene | 300~900 | 121 | 8.09 × 109 | 38.2 | 34 ms/38 ms | 70 | |
| MAPbI3/PbS QDs layer | 375~1100 | 132 @900 nm | 5.1 × 1012 @900 nm | 18.2% @900 nm | 100 | 80 | |
| MAPbI3/PbS-SCN QDs layer | 365~1550 | 1.58×103 @940 nm | 3.0 × 1011 @940 nm | <4.2×104 | 81 | ||
| MAPbI3:PbS QDs | 400~1000 | 3.30 × 1011 @900 nm | 6% @900 nm | <5 × 105 | 83 | ||
| MAPbI2.5Br0.5PbS QDs | 400~1400 | 99 @975 | 4 ×1012 @1240 nm | 40% @1240 nm | 60 | <10 | 79 |
| MAPbI3/PbSe QDs layer | 300~1500 | 700 @1200 nm | 7×107@1200 nm | 2.5×103/3×103 | 82 | ||
| MAPbI3-xClx:PbS QDs | 300~1500 | 350 @1300 nm | 9 × 1010@1300 | 250/500 | 98 | ||
| MAPbI3/PDPP3T | 300~940 | 154 @835 nm | 8.8 × 1010 @835 nm | 1% @937 nm | 3×104/1.5×105 | 88 | |
| MAPbI3/PDPPTDTPT | 350~1050 | 1 × 1011 @900 nm | 10%~20% @800~950 nm | 95 | 6.1 × 10−3 | 89 | |
| MAPbI3/PTB7-Th/IEICO-4F | 340~940 | 518 | >1010 @340~940 nm | >70% | 500/510 | 92 | |
| MAPbI3/SWCNTs/NDI-DPP | 375~1400 | 150 @1064 nm | 2×1012 @920~940 nm | 20% @920~940 nm | 4.32/12.16 | 93 | |
| MAPbI3/F8IC:PTB7-Th | 300~1000 | 370 @870 nm | 2.3 × 1011 @870 nm | 54% @850 nm | 191 | 35/20 | 94 |
