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二维材料的一维纳米带
李璇, 黄炯鹏, 张一帆, 石磊
化学进展, 2023, 35(1): 88-104.   DOI: 10.7536/PC220544

Preparation Method Width Layer Number Energy Gap
Graphene Nanoribbon lithography[12⇓~14] tens of nm single 0.002~0.126 eV[12]
ultrasonication in solution[15] 10~50 nm ≤3 /
nanotube zipping[16,17] 10~20 nm single/few /
on-surface synthesis[18⇓⇓⇓~22] 7-AGNR/3-AGNR single 2.3/3.2 eV[18]
CVD[25⇓⇓~28] ~23 nm/3-AGNR single /
epitaxy[30] <5 nm single /
confined synthesis[31⇓⇓~34] 0.5~1 nm/6,7-AGNR single 1.9~2.3 eV[32]
Graphdiyne Nanoribbon organic synthesis[41] ~60 nm single 1.9 eV[41]
Biphenylene Nanoribbon on-surface synthesis[44,48] 12-/18-/21-
armchair BNR		 single 0.1~1 eV[42⇓⇓⇓⇓~47]

Boron Nitride Nanoribbon		 nanotube zipping[53⇓⇓~56] <30 nm several armchair: >4 eV
zigzag: metallic[49⇓⇓~52]
ultrasonication in solution[57] <200 nm single/few
epitaxy[58] hundreds of nm single
Phosphorus Nanoribbon lithography[64,65] <10 nm few >1.5 eV[59]
ultrasonication in solution[66,67] 4~50 nm single/few


MoS2 Nanoribbon		 nanotube zipping[73] ~90 nm 20~30 armchair: >0.56 eV[69]
confined synthesis[74] 1.5~4 nm single
CVD[75⇓~77] tens to hundreds of nm single/few
lithography[78] 157~465 nm 5
organic synthesis[79] 50~800 nm several

MoSe2 Nanoribbon		 lithography[83] 300±50 nm single <1.5 eV[80]
CVD[80] ~150 nm single
molecular beam epitaxy[84~85] 10~30 nm single/few
template assisted growth[86] ~0.7 nm single

WS2 Nanoribbon		 nanotube zipping[73,90] ~100 nm several armchair: semiconducting
zigzag: metallic[88]
lithography[91] ~20 nm several
confined synthesis[92] 1~3 nm single

WSe2 Nanoribbon		 lithography[96] <10 nm single armchair: semiconducting
zigzag: metallic[93]
CVD[97] tens to thousands of nm single
epitaxy[98] tens to hundreds of nm single

WTe2 Nanoribbon		 CVD[102⇓~104] 100~200 nm single/few armchair: semiconducting
zigzag: metallic[100]
confined synthesis[105] ~1 nm single
transformation from nanowire[106] ~10 nm several
ReS2 Nanoribbon CVD[109] ~50 nm few 0.9~1.6 eV[108]
confined synthesis[110] ~1.3 nm single
表1 各类纳米带的制备方法、宽度、层数和能隙
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