化学进展

图/表详细信息

二维材料的一维纳米带

李璇, 黄炯鹏, 张一帆, 石磊

化学进展, 2023, 35(1): 88-104. DOI: 10.7536/PC220544

	Preparation Method	Width	Layer Number	Energy Gap
Graphene Nanoribbon	lithography^[12⇓~14]	tens of nm	single	0.002~0.126 eV^[12]
	ultrasonication in solution^[15]	10~50 nm	≤3	/
	nanotube zipping^[16,17]	10~20 nm	single/few	/
	on-surface synthesis^{[18⇓⇓⇓~22]}	7-AGNR/3-AGNR	single	2.3/3.2 eV^[18]
	CVD^{[25⇓⇓~28]}	~23 nm/3-AGNR	single	/
	epitaxy^[30]	<5 nm	single	/
	confined synthesis^{[31⇓⇓~34]}	0.5~1 nm/6,7-AGNR	single	1.9~2.3 eV^[32]
Graphdiyne Nanoribbon	organic synthesis^[41]	~60 nm	single	1.9 eV^[41]
Biphenylene Nanoribbon	on-surface synthesis^[44,48]	12-/18-/21- armchair BNR	single	0.1~1 eV^{[42⇓⇓⇓⇓~47]}
Boron Nitride Nanoribbon	nanotube zipping^{[53⇓⇓~56]}	<30 nm	several		armchair: >4 eV zigzag: metallic^{[49⇓⇓~52]}
	ultrasonication in solution^[57]	<200 nm	single/few
	epitaxy^[58]	hundreds of nm	single
Phosphorus Nanoribbon	lithography^[64,65]	<10 nm	few		>1.5 eV^[59]
Phosphorus Nanoribbon	ultrasonication in solution^[66,67]	4~50 nm	single/few		>1.5 eV^[59]
MoS₂ Nanoribbon	nanotube zipping^[73]	~90 nm	20~30		armchair: >0.56 eV^[69]
	confined synthesis^[74]	1.5~4 nm	single
	CVD^[75⇓~77]	tens to hundreds of nm	single/few
	lithography^[78]	157~465 nm	5
	organic synthesis^[79]	50~800 nm	several
MoSe₂ Nanoribbon	lithography^[83]	300±50 nm	single		<1.5 eV^[80]
	CVD^[80]	~150 nm	single
	molecular beam epitaxy^[84~85]	10~30 nm	single/few
	template assisted growth^[86]	~0.7 nm	single
WS₂ Nanoribbon	nanotube zipping^[73,90]	~100 nm	several		armchair: semiconducting zigzag: metallic^[88]
	lithography^[91]	~20 nm	several
	confined synthesis^[92]	1~3 nm	single
WSe₂ Nanoribbon	lithography^[96]	<10 nm	single		armchair: semiconducting zigzag: metallic^[93]
	CVD^[97]	tens to thousands of nm	single
	epitaxy^[98]	tens to hundreds of nm	single
WTe₂ Nanoribbon	CVD^[102⇓~104]	100~200 nm	single/few		armchair: semiconducting zigzag: metallic^[100]
	confined synthesis^[105]	~1 nm	single
	transformation from nanowire^[106]	~10 nm	several
ReS₂ Nanoribbon	CVD^[109]	~50 nm	few		0.9~1.6 eV^[108]
ReS₂ Nanoribbon	confined synthesis^[110]	~1.3 nm	single		0.9~1.6 eV^[108]