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化学进展 2004, Vol. 16 Issue (02): 243- 前一篇   后一篇

• 综述与评论 •

用于光致抗蚀剂的聚对羟基苯乙烯的合成及其进展

孟诗云;李光宪*;杨其;黄亚江   

  1. (四川大学高分子材料科学与工程学院 成都 610065)
  • 收稿日期:2002-12-01 修回日期:2003-03-01 出版日期:2004-03-24 发布日期:2004-03-24
  • 通讯作者: 李光宪
下载PDF ( 2969 ) 引用
导出 被引次数 ( 10 | 2 )

Progress in the Synthesis of Poly(4-Hydroxystyrene) for Polymer Photoresists

Meng Shiyun;Li Guangxian*;Yang Qi;Huang Yajiang   

  1. (The School of Polymer Materials Science and Technology, Sichuan University, Chengdu 610065, China)
  • Received:2002-12-01 Revised:2003-03-01 Online:2004-03-24 Published:2004-03-24
  • Contact: Li Guangxian
随着集成电路芯片的发展,生产物理和化学性质均一的高分子光阻剂得到了各信息产业国的重视.到目前为止,含对羟基苯乙烯基的高分子光阻剂已成为光刻蚀0.11μm线宽芯片的关键技术.本文综述了目前合成窄分布的含对羟基苯乙烯基的高分子光阻剂的各种方法,在此基础上比较了各种合成方法的优缺点,为合成窄分布的含对羟基苯乙烯基的高分子光阻剂提供了必要的指导.
关键词： 对羟基苯乙烯, 光阻剂, 活性聚合
With the development of the integrate circuit chip technology, more and more attentions have been paid to the synthesis of polymer photoresists with homogeneous chemical and physical features, for the reason that the fabricating polymer photoresists based on poly (4-hydroxystyrene) became one of the key technologies for making the O.llμm chip. In this paper, the methods of synthesizing nan-ow dispersing polymer photoresists based on poly (4-hydroxystyrene) was reviewed and compared with each other, in order to provide a useful guide for the synthesizing polymer photoresists based on poly (4-hydroxystyrene).
Key words: p-hydroxystyrene, photoresists, living polymerization

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