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化学进展 2014, Vol. 26 Issue (11): 1867-1888 DOI: 10.7536/PC140729 前一篇   

• 综述与评论 •

微电子光致抗蚀剂的发展及应用

魏玮1, 刘敬成1, 李虎1, 穆启道2, 刘晓亚*1   

  1. 1. 江南大学化学与材料工程学院 无锡 214122;
    2. 苏州瑞红电子化学品有限公司 苏州 215124
  • 收稿日期:2014-07-01 修回日期:2014-08-01 出版日期:2014-11-15 发布日期:2014-09-12
  • 通讯作者: 刘晓亚 E-mail:lxy@jiangnan.edu.cn
  • 基金资助:

    国家重大科技专项(No. 2010ZX02304)资助

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Development and Application of Microelectronic Photoresist

Wei Wei1, Liu Jingcheng1, Li Hu1, Mu Qidao2, Liu Xiaoya*1   

  1. 1. School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122;
    2. Suzhou Rui Hong Electronic Chemicals Co. Ltd., Suzhou 215124, China
  • Received:2014-07-01 Revised:2014-08-01 Online:2014-11-15 Published:2014-09-12
  • Supported by:

    The work was supported by the National Science and Technology Major Project of China (No. 2010ZX02304)

光致抗蚀剂,又称光刻胶,是微电子工业中制作大规模和超大规模集成电路不可或缺的核心材料,因其在国民经济和国防建设中具有战略地位而备受研究者关注.本文梳理了光致抗蚀剂从早期的聚乙烯醇肉桂酸酯、环化橡胶-叠氮化合物、近紫外G线(436-nm)和I线(365-nm)酚醛树脂-重氮萘醌类光致抗蚀剂,到深紫外(248-nm和193-nm)、真空紫外(157-nm)光致抗蚀剂,再到极紫外(13.5-nm)、电子束、纳米压印、嵌段共聚物自组装、扫描探针等下一代光刻技术用光致抗蚀剂的发展脉络,综述了其研究进展.重点对深紫外化学增幅型光致抗蚀剂体系进行了总结,包括主体成膜树脂、光产酸剂以及溶解抑制剂、碱性化合物等添加剂,并介绍了下一代光刻技术用光致抗蚀剂的最新研究成果.最后对光致抗蚀剂未来的发展前景和方向进行了展望.

关键词： 光致抗蚀剂, G线, I线, 深紫外, 极紫外, 电子束, 纳米压印, 嵌段共聚物自组装

Photoresist is the indispensable and key material used for fabricating large-scale and super-large-scale integrated circuits in microelectronic industry. Due to its strategic role in the construction of national economy and national defense, photoresist has aroused great attention of researchers. Since the birth of the first integrated circuit board in 1959, photoresist has gradually evolved from the resists used for traditional ultraviolet (UV) photolithography, including early polyvinyl cinnamate, cyclized rubber/azide system, near-UV (436-nm G-line and 365-nm I-line) novolac/diazonaphthoquinone photoresists, deep-UV (DUV, 248-nm and 193-nm) and vacuum-UV (157-nm) photoresists, to the resists used for the so-called next generation lithography (NGL), such as extreme-UV lithography (EUVL), electron-beam lithography (EBL), nanoimprint lithography (NIL), block copolymer lithography (BCL), and scanning probe lithography (SPL). In this review, the above evolution of photoresist and its research progress are summarized based on a large amount of literature. Thereinto, DUV chemically amplified photoresists are focused, including matrix resins, photoacid generators, and additives (for example, dissolution inhibitors and basic compounds). In addition, the recent research achievements of the resists for EUVL, EBL, NIL, BCL, and SPL are also highlighted. Finally, the prospect and research directions of photoresist in the future are briefly discussed.

Contents
1 Introduction
2 Polyvinyl cinnamate and cyclized rubber negative-tone photoresists
3 G-line and I-line photoresists
3.1 Novolac/diazonaphthoquinone (DNQ) resists
3.2 Other systems
4 Deep-ultraviolet (DUV) photoresists
4.1 248-nm photoresists
4.2 193-nm photoresists
5 Vacuum-ultraviolet (157-nm) photoresists
6 Resists for next generation lithography (NGL)
6.1 Extreme-ultraviolet lithography (EUVL)
6.2 Electron-beam lithography (EBL)
6.3 Nanoimprint lithography (NIL)
6.4 Block copolymer lithography (BCL)
6.5 Scanning probe lithography (SPL)
7 Conclusions and perspective

Key words: photoresist, G-line, I-line, DUV, EUV, electron beam, nanoimprint, block copolymer self-assembly

中图分类号: 

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[1] 刘锡洹. 发展中的电子化工材料[J]. 化学进展, 1995, 7(03): 173-.
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微电子光致抗蚀剂的发展及应用