Precursor type | Composition | Etching method | MXene | ref |
---|---|---|---|---|
M2AX 211 | Ti2AlC | 10% conc.-10 h-RT | Ti2CTx | |
V2AlC | 50% conc.-90 h-RT | V2CTx | ||
Nb2AlC | 50% conc.-90 h-RT | Nb2CTx | ||
M3AX2 312 | Ti3AlC2 | 50% conc.-2 h-RT | Ti3C2Tx | |
Ti3SiC2 | HF 30% conc. + H2O2 35% conc.-45 h-40 ℃ | Ti3C2Tx | ||
Ti3AlCN | 30% conc.-18 h-RT | Ti3CNTx | ||
M4AX3 413 | V4AlC3 | 40% conc.-165 h-RT | V4C3Tx | |
Nb4AlC3 | 49% conc.-140 h-RT | Nb4C3Tx | ||
Ta4AlC3 | 50% conc.-72 h-RT | Ta4C3Tx |