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化学进展 2008, Vol. 20 Issue (0708): 1064-1072 前一篇   后一篇

• 综述与评论 •

一维硅纳米材料的可控制备和机理*

张晓丹1,2 曹阳1 贺军辉1**   

  1. （1.中国科学院理化技术研究所 功能纳米材料实验室 北京100190；
    2．中国科学院研究生院 北京100049）
  • 收稿日期:2007-09-28 修回日期:2007-11-26 出版日期:2008-08-24 发布日期:2008-08-24
  • 通讯作者: 贺军辉
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Controlled Preparation and Mechanism Study of One-dimensional Silicon Nanomaterials

Zhang Xiaodan1,2 Cao Yang1 He Junhui1**   

  1. (1.Functional Nanomaterials Laboratory, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China; 2. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China)
  • Received:2007-09-28 Revised:2007-11-26 Online:2008-08-24 Published:2008-08-24
  • Contact: He Junhui
一维硅纳米材料具有不同于体硅材料的特殊光电性能，在光电子领域具有潜在的应用价值。通过“剪裁”一维硅纳米材料的尺寸、形貌、化学组分等，可以调控其物理化学性质。因此，探索并实现一维硅纳米材料的可控制备对于其实际应用至关重要。本文综述了一维硅纳米材料可控制备的最新进展，介绍了几种重要的制备方法及其生长机理，比较了不同方法在可控制备一维硅纳米材料中的优缺点，并展望了其未来发展方向。
关键词： 一维硅纳米材料, 可控制备, 生长机理

One-dimensional silicon nanomaterials have unique optoelectronic properties compared with bulk silicon materials, and possess potential applications in optical and electronic fields. Their physicochemical properties can be tuned by tailoring their size, morphology and composition. Therefore, it is extremely important to explore and realize controlled preparation of one-dimensional silicon nanomaterials for their future applications. The recent progress in controlled preparation of one-dimensional silicon nanomaterials is reviewed. Several important preparation methods and their growth mechanisms are introduced, and the advanteges and disadvanteges of these different methods in controlled preparation of one-dimensional silicon nanomaterials are discussed. The research trends for their future are prospected.

Key words: one-dimensional silicon nanomaterials, controlled preparation, growth mechanism

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