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基于纳米ZnO的白光LED

方云霞, 方晓明*, 张正国   

  1. 华南理工大学化学与化工学院 传热强化与过程节能教育部重点实验室 广州 510640
  • 收稿日期:2011-11-01 修回日期:2012-01-01 出版日期:2012-08-24 发布日期:2012-08-06
  • 通讯作者: 方晓明 E-mail:cexmfang@scut.edu.cn
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Zinc Oxide for White Light Emitting Diode

Fang Yunxia, Fang Xiaoming, Zhang Zhengguo   

  1. Key Lab of Enhanced Heat Transfer and Energy Conservation, Ministry of Education, School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou 510640, China
  • Received:2011-11-01 Revised:2012-01-01 Online:2012-08-24 Published:2012-08-06
白光发光二极管被誉为第4代照明光源。ZnO纳米结构因含有大量本征和/或非本征缺陷使其除出现在紫外区域的带边发射外还能产生覆盖400-700 nm可见光范围的深能级发光,从而可用于白光LED。本文系统地介绍了将ZnO纳米结构应用于白光LED的几种器件构造,并评述了各自的性能特点和研究进展。因为直接基于ZnO纳米结构电致发光的白光LED需要施加较高的偏压,所以将ZnO纳米结构与p型半导体复合制成异质结成为了研究的热点。ZnO纳米结构的制备方法和形貌特性会影响白光LED性能,对ZnO纳米结构进行掺杂是提升性能的重要手段。此外,将ZnO纳米材料和聚合物的优点集于一体的ZnO/聚合物异质结构也在白光LED中具有广阔的发展空间。最后,指出了纳米ZnO在白光LED应用中存在的问题和今后的发展方向。
关键词： 白光LED, ZnO, 电致发光, 光致发光
White light-emitting diodes (WLEDs), a new type of cold solid-state lighting sources, have been considered as “the fourth-generation lighting sources” owing to their advantages of small size, high efficiency, and long lifetime. ZnO is an important semiconductor with excellent optoelectronic and piezoelectric properties, and can be easily prepared into various nanostructures with different morphologies. Besides showing a sharp band-gap emission peak located within the ultra-violet region, ZnO nanostructures exhibit a broad deep band emission that can cover the visible light region between 400 nm and 700 nm, which originates from their intrinsic and/or extrinsic defects, and thus show a potential application in WLEDs. This paper systematically introduces several types of WLEDs configuration composed of ZnO nanostructures, and reviews their performance characteristics and research progress. Since the WLEDs just based on the electroluminescence of ZnO nanostructures need to be applied a high bias, the WLEDs consisting of the heterojunctions prepared by depositing ZnO nanostructures directly on p-type semiconductors (such as GaN) become a hot topics. The preparation methods and the obtained morphologies of ZnO nanostructures have effects on the photoluminescent and electroluminescent spectra of the ZnO nanostructures and thus the performance of the WLEDs. Doping with metal ions or cooperating with other semiconductors can effectively tune the emission spectra of ZnO nanomaterials and thus improve the performance of WLEDs. Moreover, ZnO/polymer heretostructures that combine the excellent properties of ZnO nanostructures with the advantages of polymers show great promise for application in WLEDs. Finally, the problems related to the researches on WLEDs based on ZnO nanostructures and the future developing trends are presented. Contents 1 Introduction
2 WLEDs based on electroluminescence of ZnO nanostructures
3 WLEDs based on electroluminescence of ZnO/polymer heterostructures
4 WLEDs based on photoluminescence of nanosized ZnO
5 Conclusions and outlook
Key words: white light emitting diode, ZnO, electroluminescence, photoluminescence

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基于纳米ZnO的白光LED