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化学进展 2009, Vol. 21 Issue (01): 128-133 前一篇   后一篇

• 综述与评论 •

溶胶凝胶法制备铜铁矿结构p型透明导电氧化物薄膜*

王金梅1;李达1;邓赞红1;朱雪斌2;董伟伟1;方晓东1**   

  1. (1.中国科学院安徽光学精密机械研究所新型薄膜太阳电池重点实验室 合肥 230031; 2. 中国科学院固体物理研究所新型薄膜太阳电池重点实验室 合肥 230031)
  • 收稿日期:2008-03-27 修回日期:2008-07-24 出版日期:2009-01-24 发布日期:2009-01-25
  • 通讯作者: 方晓东 E-mail:xdfang@aiofm.ac.cn

Preparation of the Delafossite Structure p Type Transparent Conducting Oxide Thin Films by Sol-Gel Process

Wang Jinmei1;Li Da1;Deng Zanhong1;Zhu Xuebin2;Dong Weiwei1;Fang Xiaodong1**   

  1. (1. Key Lab of New Thin Film Solar Cells, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China|2. Key Lab of New Thin Film Solar Cells, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China)
  • Received:2008-03-27 Revised:2008-07-24 Online:2009-01-24 Published:2009-01-25
  • Contact: Fang Xiaodong E-mail:xdfang@aiofm.ac.cn

铜铁矿结构p型透明导电氧化物(transparent conducting oxide, TCO)薄膜是一类在电子学领域具有广泛应用前景的新材料,因其可与n-TCO薄膜形成真正意义上的“透明器件”而备受关注。本文介绍了铜铁矿结构p-TCO的结构特性以及溶胶凝胶法的基本原理和特点;系统地介绍了溶胶凝胶法制备铜铁矿结构p-TCO薄膜的工艺;分析比较了有机醇盐、无机盐溶胶体系的优缺点;最后讨论了进一步的发展方向,指出溶胶凝胶法是一种高效可行的制备p-TCO薄膜的方法。

The delafossite structure p type transparent conducting oxide (TCO) thin films are promising candidates with potential applications in electronics, because it maybe generate “transparent devices” with n-TCO. In this paper, the structural property of the delafossite structure p-TCO, as well as the basic principle and the characteristic of the sol-gel method are reviewed. The technological process in preparation of the delafossite structure p-TCO thin films by sol-gel method is discussed systematically. The relative advantages and disadvantages of the systems of sol about organic alkoxide and inorganic salt are analyzed, and further development are discussed. It is pointed out that sol-gel method is an effective and feasible means to prepare p-TCO thin films.

Contents
1 Introduction
2 The structural property of the delafossite structure p-TCO
3 The summarization of the sol-gel method
3.1 The basic principle of the sol-gel method
3.2 The characteristic of the Sol-Gel method
4 Preparation of the delafossite structure p-TCO by sol-gel method
4.1 The hydrolysis technology of organic alkoxide
4.2 Inorganic salt technology of the sol-gel method
5 Outlook

中图分类号: 

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[ 1 ]  Bornand V , Papet P. J . Phys. IV , 2005 , 126 : 85 —88
[ 2 ]  Tala-Ighil R , Boumaour M. Eur. Phys. J . Appl . Phys. , 2007 , 40 :253 —256
[ 3 ]  Liu Y, Rath J K, Schropp R E I. Surf . Coat . Technol . , 2007 ,201 : 9330 —9333
[ 4 ]  Lee J C , Dutta V , Yoo J S , et al . Superlattices Microstruct . , 2007 ,42 : 369 —374
[ 5 ]  Feng Y J , Cui Y H , Logan B , et al . Chemosphere , 2008 , 70 :1629 —1636
[ 6 ]  Banerjee A N , Chattopadhyay K K. Prog. Cryst . Growth Charact .Mater. , 2005 , 50 : 52 —105
[ 7 ]  Kawazoe H , Yasukawa M, Hyodo H , et al . Nature , 1997 , 389 :939 —942
[ 8 ]  Shannon R D , Rogers D B , Prewitt C T. Inorg. Chem. , 1971 , 10 :723 —727
[ 9 ]  Lalic M V , Mestnik J , Carbonari A W, et al . J . Phys. Condens.Matter , 2002 , 14 : 5517 —5528
[10 ]  Marquardt M A , Ashmore N A , Cann D P. Thin Solid Films , 2006 ,496 : 146 —156
[11 ]  Duan N , Sleight A W, Jayaraj M K, et al . Appl . Phys. Lett . ,2000 , 77 : 1325 —1326
[12 ]  Li J , Yokochi A F T, Sleight A W. Solid State Sci . , 2004 , 6 :831 —839
[13 ]  Gall R B , Ashmore N , Marquardt M A , Tan X L , et al . J . Alloys Compd. , 2005 , 391 : 262 —266
[14 ]  Sasaki M, Shimode M. J . Phys. Chem. Solids , 2003 , 64 : 1675 —1679
[15 ]  Yaicle C , Blacklocks A , Chadwick A V , et al . Appl . Surf . Sci . ,2007 , 254 : 1343 —1346
[16 ]  Tsuboi N , Ohara H , Hoshino T, et al . Jpn. J . Appl . Phys. , 2005 ,44 : 765 —768
[17 ]  Banerjee A N , Maity R , Ghosh P K, et al . Thin Solid Films , 2005 ,474 : 261 —266
[18 ]  Nagarajan R , Draeseke A D , Sleight A W, et al . J . Appl . Phys. ,2001 , 89 : 8022 —8025
[19 ]  Ginley D , Roy B , Ode A , et al . Thin Solid Films , 2003 , 445 :193 —198
[20 ]  Tonooka K, Kikuchi N. Thin Solid Films , 2006 , 515 : 2415 —2418
[21 ]  Neumann-Spallart M, Pai S P , Pinto R. Thin Solid Films , 2007 ,515 : 8641 —8644
[22 ]  Banerjee A N , Chattopadhyay K K. J . Appl . Phys. , 2005 , 97 :art . no. 084308
[23 ]  Barnabe A , Mugnier E , Presmanes L , Tailhades P. Mater. Lett . ,2006 , 60 : 3468 —3470
[24 ]  Liu J W, Lee S C , Yang C H. Materials Trans. , 2007 , 48 : 2743 —2746
[25 ]  Mahapatra S , Shivashankar S A. Chem. Vap. Deposition , 2003 , 9 :238 —240
[26 ]  惠乐(Hui L) , 唐子龙(Tang Z L) , 罗绍华(Luo S H) , 张中太(Zhang Z T) . 化学进展(Progress in Chemistry) , 2007 , 19 (10) :1460 —1466
[27 ]  Dislich H. Angew. Chem. Int . Ed. , 1971 , 10 : 363 —370
[28 ]  Heibel M, Kumar G, Wyse C , Bukovec P , Bocarsly A B. Chem.Mater. , 1996 , 8 : 1504 —1511
[29 ]  Bouquillon A , Turrell S , Robinet L , et al . Actual . Chim. , 2007 ,312P313 : 40 —46
[30 ]  Rivera T, Azorin J , Barrera M, et al . Radiat . Eff . Defect . Solid. ,2007 , 162 : 731 —736
[31 ]  Macdonald S M, Szot K, Niedziolka J , et al . J . Solid State Electrochem. , 2008 , 12 : 287 —293
[32 ]  Brunckova H , Medvecky L , Mihalik J . J . Eur. Ceram. Soc. ,2008 , 28 : 123 —131
[33 ]  Daiko Y, Yajima H , Kasuga T. J . Eur. Ceram. Soc. , 2008 , 28 :267 —270
[34 ]  Kim I Y, Ohtsuki C , Kawachi G, et al . J . Sol2Gel Sci . Technol . ,2008 , 45 : 43 —49
[35 ]  Francioso L , Prato A , Siciliano P. Sens. Actuator B : Chem. ,2008 , 128 : 359 —365
[36 ]  Brennecka GL , Parish C M, Tuttle B A , et al . J . Mater. Res. ,2008 , 23 : 176 —181
[37 ]  Saha D , Das S , Sengupta K. Sens. Actuator B : Chem. , 2008 ,128 : 383 —387
[38 ]  Wei B , Cheng I , Luo KQ , et al . Angew. Chem. Int . Ed. , 2008 ,47 : 331 —333
[39 ]  Schwartz R W, Schneller T, Waser R. Comp. Rend. Chim. , 2004 ,7 : 433 —461
[40 ]  Ohashi M, Iida Y, Morikawa H. J . Am. Ceram. Soc. , 2002 , 85 :270 —272
[41 ]  Li D , Fang X D , Deng Z H , et al . J . Phys. D: Appl . Phys. ,2007 , 40 : 4910 —4915
[42 ]  Deng Z H , Zhu X B , Tao R H , et al . Mater. Lett . , 2007 , 61 :686 —689
[43 ]  Tonooka K, Shimokawa K, Nishimura O. Thin Solid Films , 2002 ,411 : 129 —133
[44 ]  Snure M, Tiwari A. Appl . Phys. Lett . , 2007 , 91 : art . no. 092123
[45 ]  Li W, Cheng H. J . Cent . South Univ. , 2007 , 14 : 291 —295

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