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化学进展 2002, Vol. 14 Issue (01): 61- 前一篇   后一篇

• 综述与评论 •

金属β-二酮化合物用于MOCVD法生长铁电氧化物薄膜*

许效红;侯云;王民;王弘;周爱秋   

  1. 山东大学晶体材料国家重点实验室 济南 250100; 山东大学化学与环境科学学院 济南 250100
  • 收稿日期:2000-12-01 修回日期:2001-05-01 出版日期:2002-01-24 发布日期:2002-01-24

Metal β-Diketonates Used as Precursors for Ferroelectric Oxide Thin Films

Xu Xiaohong;Hou Yun;Wang Min;Wang Hong;Zhou Aiqiu   

  1. College of Chemistry and Environment Science, Shandong University, Jinan 250100, China; College of Crystal Materials, Shandong University, Jinan 250100, China

  • Received:2000-12-01 Revised:2001-05-01 Online:2002-01-24 Published:2002-01-24
对用于MOCVD法生长铁电氧化物薄膜的金属β-二酮化合物的制备、结构及性质进行了评述,对它们在生长铁电薄膜中的应用现状进行了介绍,并对它们的应用前景作了展望。
The preparation of volatile metalβ-diketonates used as precursors for deposition of the ferroelectric oxide thin films is reviewed. The structures and properties of them are presented and discussed. The use of them in metal organic vapor deposition of ferroelectric oxide thin films is also discussed.

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[1] 孔祥蓉,刘俊亮,曾燕伟. MOCVD生长铁电氧化物薄膜MO源研究进展[J]. 化学进展, 2005, 17(05): 839-846.