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化学进展 2018, Vol. 30 Issue (6): 847-863 DOI: 10.7536/PC170925 前一篇   后一篇

• 综述 •

二硫化钼薄膜的刻蚀方法及其应用

奚清扬1, 刘劲松1,2*, 李子全1,3, 朱孔军2, 台国安2*, 宋若谷1   

  1. 1. 南京航空航天大学 材料科学与技术学院 南京 211106;
    2. 南京航空航天大学 机械结构力学及控制国家重点实验室 南京 210016;
    3. 南京邮电大学 材料科学与工程学院 南京 210003
  • 收稿日期:2017-09-25 修回日期:2017-12-27 出版日期:2018-06-15 发布日期:2018-03-07
  • 通讯作者: 刘劲松,e-mail:jsliu@nuaa.edu.cn;台国安,e-mail:taiguoan@nuaa.edu.cn E-mail:jsliu@nuaa.edu.cn;taiguoan@nuaa.edu.cn
  • 基金资助:
    中央高校基本科研业务费专项资金（No.NS2017038）、国家自然科学基金项目（No.51372114，61474063，51672130）、江苏省高等学校大学生实践创新训练计划项目（No.201710287032X）和江苏省自然科学基金项目（No.BK20151475）资助
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Etching Methods and Application of Molybdenum Disulfide Film

Qingyang Xi1, Jinsong Liu1,2*, Ziquan Li1,3, Kongjun Zhu2, Guoan Tai2*, Ruogu Song1   

  1. 1. College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China;
    2. State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;
    3. College of Material Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
  • Received:2017-09-25 Revised:2017-12-27 Online:2018-06-15 Published:2018-03-07
  • Supported by:
    The work was supported by the Fundamental Research Funds for the Central Universities (No.NS2017038),the National Natural Science Foundation of China (No.51372114,61474063,51672130),the Project of Practice Innovation Training Program for College Students in Jiangsu (No.201710287032X),and the Natural Science Foundation of Jiangsu Province (No.BK20151475).
过渡金属硫化物因能带结构与层数具有明显的依赖关系而受到广泛关注，尤其是二维二硫化钼（MoS2）薄膜因其优良的光电性能而成为研究热点。目前，化学气相沉积法（CVD）和剥离法已成为制备MoS2薄膜的主要方法，但这两种方法均存在难以精确控制MoS2层数的问题，研究证实通过刻蚀手段能够对MoS2薄膜层数进行进一步加工，从而得到单层或特定层数的样品。本文综述了基于不同刻蚀原理的MoS2薄膜刻蚀技术的国内外研究进展，分析讨论了不同刻蚀技术对刻蚀后MoS2薄膜质量的影响，介绍了MoS2刻蚀方法在场效应晶体管（FET）以及其他光电器件领域的实际应用和发展前景，最后对将来研究中需要着力解决的问题进行了展望。
关键词： 二硫化钼, 刻蚀, 单层, 场效应晶体管, 光电器件
Transition metal dichalcogenides (TMDCs) have been widely concerned due to dependence of its energy band on the number of layers. Especially the two-dimensional molybdenum disulfide (MoS2) film has become a research hot spot because of its excellent photoelectric properties. So far, chemical vapor deposition (CVD) and exfoliation have become the main methods for preparing MoS2 films, but it is very difficult to precisely control the layers of MoS2 using these methods. Research confirms that the MoS2 films can be further processed by etching methods so as to obtain the sample with a monolayer or a specific number of layers. Therefore, in this paper the research progress about etching technology of MoS2 films based on different etching mechanisms is reviewed and the influence of different etching techniques on the quality of etched films is analyzed. Moreover, the application and prospects of these etching methods in field effect transistor(FET) and other optoelectronic devices are also introduced. Finally, problems that need to be solved in the future study are prospected.
Contents
1 Introduction
2 Physical properties of molybdenum disulfide films
2.1 Crystal structure and band structure
2.2 Optical properties
3 Etching methods of molybdenum disulfide films
3.1 Plasma etching
3.2 Laser etching
3.3 Oxygen/air etching
3.4 Other chemical etching methods
4 Application of etching methods in optoelectronic devices
4.1 Field effect transistor
4.2 Other optoelectronic devices
5 Conclusion and outlook
Key words: molybdenum disulfide, etching, monolayer, field effect transistor (FET), optoelectronic devices

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