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化学进展 DOI: 10.7536/PC120753 前一篇   后一篇

• 综述与评论 •

硅纳米线阵列的制备及其光电应用

刘莉1,2, 曹阳2, 贺军辉*2, 杨巧文1   

  1. 1. 中国矿业大学(北京)化学与环境工程学院 北京 100083;
    2. 中国科学院理化技术研究所 北京 100190
  • 收稿日期:2012-07-01 修回日期:2012-09-01 出版日期:2013-02-24 发布日期:2012-12-28
  • 通讯作者: 贺军辉 E-mail:jhhe@mail.ipc.ac.cn
  • 基金资助:

    国家自然科学基金项目(No. 11104283)和国家重点基础研究发展计划(973)项目(No.2010CB934103)资助

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导出 被引次数 ( 28 | 7 )

Preparation and Optoelectronic Applications of Silicon Nanowire Arrays

Liu Li1,2, Cao Yang2, He Junhui*2, Yang Qiaowen1   

  1. 1. School of Chemical and Environmental Engineering,China University of Mining and Technology (Beijing), Beijing 100083, China;
    2. Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
  • Received:2012-07-01 Revised:2012-09-01 Online:2013-02-24 Published:2012-12-28

近年来,硅纳米线阵列在宽波段、宽入射角范围内优异的减反射性能及其在光电领域的巨大应用前景引起了相关研究者的广泛关注。本文综述了国内外硅纳米线阵列的制备及其在光电应用方面的最新研究进展。关于硅纳米线阵列的制备方法,主要从“自下而上”和“自上而下”两大类出发,分别阐述了模板辅助的化学气相沉积法、化学气相沉积结合Langmuir-Blodgett技术法和金属催化化学刻蚀法,其中重点介绍了目前使用最为广泛且操作简单的金属催化化学刻蚀法的步骤、机理及控制参数。关于硅纳米线阵列在光电领域的应用,主要阐述了硅纳米线阵列在光电探测器、常规太阳能电池、光电化学太阳能电池、光催化分解水制氢、光催化降解有机污染物方面的应用。最后,从硅纳米线阵列在实际应用中面临的提高光电转换效率和避免硅纳米线阵列腐蚀以提高器件的稳定性等问题出发,展望了硅纳米线阵列的表面修饰及修饰后的性能研究是未来硅纳米线阵列光电应用研究的主要方向之一。

关键词： 硅纳米线, 阵列, 制备, 光电应用

Recent years, silicon nanowire arrays have aroused extensive attention among scientists and engineers due to their unique characteristics such as excellent antireflection in both wide wavelength range and wide incidence angle and their great potentials in the field of optoelectronics. This paper reviews the latest research progress in preparation of silicon nanowire arrays and their optoelectronic applications. The preparation methods that have been verified are classified mainly into two categories, i.e., “bottom-up“and”top-down", including template-assisted chemical vapor deposition, chemical vapor deposition combined with Langmuir-Blodgett technology and metal-catalyzed chemical etching. The third method is at the present time the most frequently used as well as the simplest one, and is discussed in detail in respect of the etching steps, mechanism and controlling parameters. As for the optoelectronic applications of silicon nanowire arrays, this review mainly describes those in photodetectors, conventional solar cells, photoelectrochemical solar cells, photocatalytic water splitting, and photocatalytic degradation of organic pollutants. Finally, an outlook is made about how to improve the photoelectrical conversion efficiency and avoid the corrosion of silicon nanowire arrays, which indicates that surface modification and resulting properties may be a future research direction for silicon nanowire arrays research. Contents
1 Introduction
2 Preparation of silicon nanowire arrays
2.1 Bottom-up methods
2.2 Top-down methods
3 Optoelectronic applications of silicon nanowire arrays
3.1 Application in photodetectors
3.2 Application in solar cells, including conventional solar cells and photoelectrochemical solar cells
3.3 Application in photocatalysis
4 Conclusion and outlook

Key words: silicon nanowire, array, preparation, optoelectronic applications

中图分类号: 

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